BD246, a, b, c 25/09/2012 comset semiconductors 1/3 p p n n p p s s i i n n g g l l e e - - d d i i f f f f u u s s e e d d m m e e s s a a s s i i l l i i c c o o n n p p o o w w e e r r t t r r a a n n s s i i s s t t o o r r s s the BD246 series are pnp power transistors in a to3pn envelope. they are the power transistors for power amplifier and high-speed-switching applications. the complementary is bd245, a, b, c compliance to rohs. absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage (i c = -30ma) BD246 -45 v BD246a -60 BD246b -80 BD246c -100 v cer collector-emitter voltage (r be = 100 ? ) BD246 -55 v BD246a -70 BD246b -90 BD246c -115 v ebo emitter-base voltage -5.0 v i c collector current i c -10 a i cm -15 i b base current -3 a p t power dissipation t mb = 25 c 80 watts t j junction temperature -65 to +150 c t s storage temperature -65 to +150 thermal characteristics symbol ratings value unit r thjc junction to case thermal resistance 1.56 c / w r thj a junction to free air thermal resistance 42 c / w
BD246, a, b, c 25/09/2012 comset semiconductors 2/3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit i ces collector- emitter cut-off current v ce = -55 v , v be = 0 BD246 - - -0.4 ma v ce = -70 v , v be = 0 BD246a v ce = -90 v , v be = 0 BD246b v ce = -115 v , v be = 0 BD246c i ceo collector cut-off current v ce = -30 v , i b = 0 BD246 - - -0.7 ma BD246a v ce = -60 v , i b = 0 BD246b BD246c i ebo emitter cut-off current v e b = -5 v , i c = 0 - - -1 ma v ceo collector- emitter breakdown voltage (*) i c = -30 ma, i b = 0 BD246 -45 - - v BD246a -60 - - BD246b -80 - - BD246c -100 - - h fe dc current gain (*) v ce = -4 v, i c = -1 a 40 - - - v ce = -4 v, i c = -3 a 20 - - v ce = -4 v, i c = -10 a 4 - - v ce(sat) collector-emitter saturation voltage (*) i c = -3 a, i b = -300 ma - - -1 v i c = -10 a, i b = -2.5 a - - -4 v be base-emitter voltage(*) v ce = -4 v, i c = -3 a - - -1.6 v v ce = -4 v, i c = -10 a - - -3 h fe small signal forward current transfer ratio v ce = -10 v, i c = -500 ma, f = 1mhz 20 - - - |h fe | small signal forward current transfer ratio v ce = -10 v, i c = -500 ma, f = 1mhz 3 - - resistive-load-switching char acteristics at 25c case temperature symbol ratings test condition(s) min typ mx unit t on turn-on time i c = -1 a , i b(on) = -100 ma , i b(off) = 100 ma v be(off) = 3.7 v , r l = 20 ? , t p = 20 s dc < 2% - 0.2 - s t off turn-off time i c = -1 a , i b(on) = -100 ma , i b(off) = 100 ma v be(off) = 3.7 v , r l = 20 ? , t p = 20 s dc < 2% - 0.8 -
BD246, a, b, c 25/09/2012 comset semiconductors 3/3 mechanical data case to3pn n on isolated plastic package revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min. max. a 15.20 1600 b 1.90 2.10 c 4.60 5.00 d 3.10 3.30 e 9.60 f 2.00 g 0.35 0.55 h 1.40 j 5.35 5.55 k 20.00 l 19.60 20.20 m 0.95 1.25 n 2.00 o 3.00 p 4.00 r 4.00 s 1.80 t 4.80 5.20 pin 1 : base pin 2 : collector pin 3 : emitter
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